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savantic semiconductor product specification silicon pnp power transistors 2SA807 description with to-3 package wide area of safe operation complement to type 2sc1618 applications for power amplifier and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -6 a i b base current -3 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA807 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma i b =0 -60 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe dc current gain i c =-3a ; v ce =-4v 20 f t transition frequency i c =-0.5a ; v ce =-12v 10 mhz switching times t r rise time 1.2 s t stg storage time 1.8 s t f fall time v cc =-10v;i c =-3a; r l =3 ? i b1 =-0.3a; i b2 =50ma 0.3 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SA807 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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